advanced power p-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss -30v low on-resistance r ds(on) 20m fast switching characteristic i d -9a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice halogen-free product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 storage temperature range continuous drain current 3 -7.3 pulsed drain current 1 -50 0.02 linear derating factor parameter drain-source voltage gate-source voltage continuous drain current 3 1 200811216 ap4435GM-HF rating - 30 + 20 -9 a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the so-8 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. s s s g d d d d so-8 g d s free datasheet http://www..net/
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -30 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-7a - - 20 m ? ? , free datasheet http://www..net/
a p4435GM-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -10v -7.0v -5.0v -4.5v v g = -3.0v 0 10 20 30 40 50 0246 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c v g = -3.0v -10v -7.0v -5.0v -4.5v 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -7a v g = -10v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.8 1 1.2 1.4 1.6 1.8 2 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v) 12 16 20 24 28 32 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -5a t a =25 o c free datasheet http://www..net/
ap4435GM-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge circuit 4 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 125 free datasheet http://www..net/
millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e 5.80 6.15 6.50 e1 3.80 3.90 4.00 e g l 0.38 0.90 0.00 4.00 8.00 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ 0.254 typ package outline : so-8 advanced power electronics corp. e b 1 34 5 6 7 8 2 d e1 a1 a g part number 4435 g m ywwsss package code date code (ywwsss) y last digit of the year ww week sss sequence if last "s" is numerical letter : rohs product if last "s" is english letter : hf & rohs product e meet rohs requirement free datasheet http://www..net/
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